O_2掺杂对SiCOH低k薄膜结构与电学性能的影响  

Effect of O_2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma

作　　者：卫永霞[1] 钱晓梅[1] 俞笑竹[1] 叶超[1] 宁兆元[1] 梁荣庆[2] 

机构地区：[1]苏州大学物理科学与技术学院,江苏省薄膜材料实验室苏州215006 [2]复旦大学现代物理研究所,上海200433

出　　处：《物理学报》2007年第2期1172-1176,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10575074);苏州大学薄膜材料江苏省重点实验室资助的课题~~

摘　　要：以十甲基环五硅氧烷(D5)和氧气(O2)作为反应气体,采用电子回旋共振等离子体化学气相沉积(ECR-CVD)方法制备了k=2.62的SiCOH薄膜.研究了O2掺杂对薄膜结构与电学性能的影响.结果表明,采用O2掺杂可以在保持较低介电常数的前提下极大地降低薄膜的漏电流,提高薄膜的绝缘性能,这与薄膜中Si-O立体鼠笼、Si-OH结构含量的提高有关.Carbon-doping oxide materials （SiCOH films） with k of 2.62 are prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） from the mixture of decamethylcyclopentasioxane （D5） and oxygen （O2 ）. This paper investigates the effect of O2-doping on bonding configuration, dielectric property and leakage current of the SiCOH low dielectric constant films. The results show that the leakage current can be reduced obviously on the premise that dielectric constant k is kept at a lower value by small O2-doping amount. For the SiCOH film deposited under O2 flow of 3 cm^3/min, the dielectric constant k as low as 2.62 and leakage current of 8.2 × 10^-9 A/cm^2 can be obtained.

关 键 词：SiCOH薄膜 O2掺杂 介电性能 键结构 

分 类 号：O484.42[理学—固体物理]