双向S型负阻器件的二维计算机数值模拟  

Two dimensional numerical simulation of bi directional “S” type negative resistance device

作　　者：张富斌[1] 李建军[1] 魏希文 

机构地区：[1]大连理工大学物理系

出　　处：《大连理工大学学报》1996年第6期660-663,共4页Journal of Dalian University of Technology

基　　金：国然自然科学基金

摘　　要：介绍了一种对双向Ｓ型负阻器件进行二维数值模拟的方法，并用此方法模拟得出器件的Ｉ－Ｖ曲线及截止状态和导通状态下器件内部电位、电子空穴浓度分布和电流密度分布．A two dimensional numerical method is introduced, which has been used to simulate the device named “Bi Directional ‘S’ Type Negative Resistance Device(BNRD)”. With the method, the authors obtained the 2 D distribution for the voltage, electrons, holes and current density in the BNRD at both the block and the conduct states. All these are very useful to understand the mechanism of the device's operation.

关 键 词：半导体器件 数值模拟 计算机模拟 BNRD 

分 类 号：TN303[电子电信—物理电子学] TN302