多晶硅发射区低温晶体管电流输运模型的理论分析  

AN ANLYTICAL CURRENT TRANSPORTATION MODEL FOR POLYSILICON EMITTER BIPOLAR TRANSISTOR OPERATION AT LOW TEMPERATURES

作　　者：吴金[1] 魏同立[1] 

机构地区：[1]东南大学

出　　处：《应用科学学报》1996年第3期325-331,共7页Journal of Applied Sciences

基　　金：国家自然科学基金

摘　　要：对于小尺寸的多晶硅发射区双极晶体管，该文在忽略基区与单晶发射区少子复合的条件下，根据单晶与多晶硅界面复合与隧穿等不同机制的共同作用，建立了发射区注入电子电流Ｊｎ和基区注入空穴电流Ｊｐｓ的一维非线性解析模型．该模型可适用于低温和不同的注入偏置条件，对低温双极器件交直流性能的模拟既快速方便，同时精度也较高，可作为低温器件多维数值模拟的重要补充以指导其优化设计．The technology and structure of the polysilicon emitter is one of the important bases of modern advance silicon bipolar transistors operation for low temperatures. As for samll dimensional polysilicon bipolar transistors, and nuder the approximations of neglecting the recombination in the crystal emitter and base region, a nonlinear one dimension analytical model for emitter injecting alectron current density Jn and for base injecting hole current density Jps are proposed based on the combining effects of tunneling and recombination mechanism in the polysilicon and single crystal interface. The model is available for low temperature operation and different biased conditions, providing a quick, convenient and high precision tool for D. C. and A. C. proformances simulation and can be used as an important supplement to the multi-dimensional numerical modeling In guiding the optimization design for low temperature devices.

关 键 词：多晶硅发射区 低温 双极晶体管 电流输运模型 

分 类 号：TN322.8[电子电信—物理电子学]