以Al_2O_3/AlN为复合绝缘缓冲层的ZnO-TTFT透过率的研究  

Study on transmittance of ZnO based on transparent thin-film transistor with complex insulative buffer layer of Al2O3/AlN

作　　者：袁广才[1] 徐征[1] 张福俊[1] 王勇[1] 许洪华[1] 孙小斌[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《功能材料》2007年第2期186-189,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10374001;60576016);国家重点基础研究发展计划资助项目(2003CB314707);国家自然科学基金重点资助项目(10434030)

摘　　要：采用射频反应磁控溅射的方法,以ITO(铟锡氧化物)玻璃为衬底,在Al2O3/AlN复合栅极绝缘层上沉积有源层ZnO薄膜,并以Al作为透明薄膜晶体管器件源极和漏极,通过XRD、透射光谱研究了透明薄膜晶体管的有源层ZnO的结晶情况以及对器件在可见光范围内的透过特性的影响,得出以Al2O3/AlN为复合缓冲层薄膜晶体管,在400℃温度下退火处理后,ZnO有源层有较好的c-axis(002)择优取向,器件在可见光的范围内整体透过率在88%以上,从而实现了ZnO-TFT器件在可见光范围内的透明。A novel transparent thin-film transistor was fabricated by rf reactive magnetron sputtering, structure of which was that ITO glass was used as substrate, Al2O3 and AlN as insulator layers were deposited onto it successively ,and then active layer ZnO film was deposited onto the Al2O3/A1N compound substrate, Al was used as source and drain electrodes. By X-ray diffraction and optical transmission spectrum, crystallization of ZnO film and its influence to the device were studied. It was concluded that through rapid thermal annealing at 400℃, ZnO film characteristics was improved obviously,and c-axis （002） oriented of the ZnO film got the best and average optical transmittance of the device reached 88%. Consequently transparence of ZnO-TTFT comes true in visible light range.

关 键 词：ZNO薄膜 反应磁控溅射 透射率 透明薄膜晶体管 

分 类 号：TN304[电子电信—物理电子学] TQ050[化学工程]