衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响  

Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique

作　　者：陈新亮[1,2] 薛俊明[1,2] 张德坤[1,2] 孙建[1,2] 任慧志[1,2] 赵颖[1,2] 耿新华[1,2] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所和天津市重点实验室 [2]南开大学光电信息技术科学教育部重点实验室,天津300071

出　　处：《物理学报》2007年第3期1563-1567,共5页Acta Physica Sinica

基　　金：天津市自然科学基金(批准号:043604911);天津市科技攻关项目(批准号:043186511)资助的课题.~~

摘　　要：研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响.XRD和SEM的研究结果表明,衬底温度对ZnO薄膜的微观结构有显著影响,明显的形貌转变温度大约发生在175℃,低于175℃,薄膜呈镜面结构,晶粒为球状,高于177℃的较高温度范围,薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织;随着温度增加,薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96cm2/V.s的高迁移率和3.28×10-2Ω.cm的低电阻率,对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极.Microstructural, optical and electrical properties of updoped-ZnO films grown by metal organic chemical vapor deposition at different substrate temperature were investigated. XRD spectra and SEM photos indicate that the substrate temperature plays an important role on the microstructure of ZnO films. Morphological transition takes place obviously at around 175℃. The morphology of the ZnO films shows sphere-like structure at low temperature （ 〈 175℃ ） and then changes from pyramid-like to rock-like structure at higher temperature （ 〉 177℃）. The grain size of ZnO films grows up with the increase of substrate temperature. The high mobility （17.96 cm^2/Vs） and low resistivity （3.28 × 10^-2Ω· cm） at 177℃ have been obtained for undoped-ZnO film deposited on glass substrate. By further optimizing the structure and B-doping, ZnO film as front electrode will be applied in solar cell soon.

关 键 词：MOCVD ZNO薄膜 透明导电氧化物 太阳电池 

分 类 号：O484.1[理学—固体物理]