InP基MOEMS可调谐器件的梁变形模拟  

Deformation Simulation on the Beam of InP-Based MOEMS Tunable Devices

作　　者：吴旭明[1] 王小东[1] 何国荣[1] 王青[1] 曹玉莲[1] 谭满清[1] 

机构地区：[1]中国科学院半导体研究所光电子研究发展中心,北京100083

出　　处：《Journal of Semiconductors》2007年第2期280-283,共4页半导体学报（英文版）

摘　　要：InP基微光机电系统(MOEMS)可调谐器件的梁在实验中常出现弯曲变形的现象,其原因是在生长的时候,As原子进入InP梁,产生了内部梯度应力.使用有限元分析软件,建立了一种无须测量内部应力的模拟梁变形的方法.模拟了单臂梁和双臂梁的弯曲变形情况,理论与实验吻合.研究了As原子浓度和梁厚度对梁变形情况的影响,结果表明降低As原子浓度和增大梁厚度都有助于抑制梁的变形.Deformation of the beam in InP-based MOEMS tunable devices is frequently observed in experiments. This is because As atoms enter the beam during the growth. A method is developed to simulate the deformation,with no need to measure the gradient stress. The deformations of a one-armed beam and a two-armed beam are simulated,and the calculated values agree with the measured ones. The influences of As concentration and beam depth on the deformation are investigated, and the results show that it is useful to reduce the deformation by reducing the As concentration and increasing the beam depth.

关 键 词：微光机电系统 可调谐 变形 梯度应力 

分 类 号：TN386[电子电信—物理电子学]