Al-N共掺p型Zn_(0.95)Mg_(0.05)O薄膜的性能  

Deposition of Al-N Co-Doped p-Type Zn_(0.95)Mg_(0.05)O Thin Films

作　　者：简中祥[1] 叶志镇[1] 高国华[1] 卢洋藩[1] 赵炳辉[1] 曾昱嘉[1] 朱丽萍[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2007年第3期425-429,共5页半导体学报（英文版）

基　　金：国家自然科学重点基金(批准号:50532060);国家重点基础研究发展规划(批准号:2006CB604906)资助项目

摘　　要：利用直流反应磁控溅射法,以N2O为N掺杂源,用Al-N共掺技术制备了p型Zn0.95Mg0.05O薄膜.用X射线衍射分析(XRD)、Hall测试仪和紫外可见(UV)透射谱等研究方法对其晶体结构、电学性能和禁带宽度进行分析.XRD分析结果表明,Zn0.95Mg0.05O薄膜具有良好的晶格取向,Hall测试的结果所得p型Zn0.95Mg0.05O薄膜最低电阻率为58.5Ω.cm,载流子浓度为1.95×1017cm-3,迁移率为0.546cm2/(V.s),UV透射谱所推出的薄膜禁带宽度中,纯ZnO,p型Zn0.95Mg0.05O和p型Zn0.9Mg0.1O分别为3.34,3.39和3.46eV,可以看出Mg在ZnO禁带宽度中起了调节作用.Al-N codoped p-type Zn0.95Mg0.05O thin films were deposited on glass substrates by DC reactive manetron sputtering,N2O was used as the N doping source. The XRD patterns showed that the introduction of Mg and Al has no effect on the crystallinity of the films,the films all showed c-axis preferential orientation. A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 400 to 530℃. The lowest reliable room temperature resistivity was found to be 58. 5Ω·cm,with a carrier concentration of 1.95 × 10^17cm^-3 and a Hall mobility of 0. 546cm^2/（V·s）. The p-type behavior is stable. The optical transmittance spectra reveal blue shift in optical bandgap for the p-type Zn0.95Mg0.05O comparing with that for pure ZnO,which confirms the effective incorporation of Mg. The band gap of alloy is controllable.

关 键 词：ZNMGO P型掺杂 薄膜 

分 类 号：TN304[电子电信—物理电子学]