Mo/4H-SiC肖特基势垒二极管的研制  

Mo/Schottky Barrier Diodes on 4H-Silicon Carbide

作　　者：张发生[1,2] 李欣然[1] 

机构地区：[1]湖南大学电气与信息工程学院 [2]中南林业科技大学电子与信息工程学院,长沙410004

出　　处：《Journal of Semiconductors》2007年第3期435-438,共4页半导体学报（英文版）

基　　金：高校青年教师科研基金资助项目

摘　　要：采用微电子平面工艺，射频溅射Mo作肖特基接触，电子束热蒸发金属Ni作欧姆接触，三级场限环终端表面保护．并通过对Mo接触进行合理的高温退火，不降低理想因子和反向耐压特性情况下，有效控制肖特基势垒高度在1．2～1．3eV范围内，成功研制出高耐压低损耗Mo／4H-SiC肖特基势垒二极管，其特性测试结果为：击穿电压Vb为3000V，串联导通电阻Ron为9．2mΩ·cm^2，Vb^2/Ron为978MW／cm^2．With microelectronics plane technology, RF sputtering was used to deposit Mo to form a Schottky contact and electron beam evaporation was used to deposit Ni to form an ohmic contact in high vacuum ambient,and Mo/4H-SiC Schottkybarrier diodes were made in structures containing three-FLR. High-temperature annealing for the Mo contact is found to be effective in controlling the Schottky-barrier height at 1.2-1.3eV without degradation of the n-factor and reverse characteristics. A breakdown voltage of 3kV, a specific on resistance of 9.2mΩ·cm^2, and a good Vb^2/Ron value of 978MW/cm^2 for Mo/4H-SiC Schottky-barrier diodes are obtained experimentally.

关 键 词：SIC MO 肖特基二极管 

分 类 号：TN311[电子电信—物理电子学]