键合方法制备长波长面发射的实验和分析  

Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method

作　　者：何国荣[1] 郑婉华[1] 渠红伟[1] 杨国华[1] 王青[1] 吴旭明[1] 曹玉莲[1] 陈良惠[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2007年第3期444-447,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展计划资助项目(批准号:2003CB314902)

摘　　要：通过疏水键合方法实现了InGaAsP/InP有源区与GaAs/AlAs DBR的单面和双面键合,并通过SEM,I-V曲线和反射谱、光致发光谱等手段研究了GaAs/InP键合界面的机械、光学和电学性质,良好的界面性质为使用键合技术制备长波长面发射激光器提供了可能性.InGaAsP/InP active regions were single-fused or double-fused to GaAs/AIAs DBRs by hydrophobic bonding. The mechanical,optical,and electrical characteristics of the bonded interfaces were investigated through SEM, reflection spectrum, PL spectrum,and I-V curves. Good performance indicates an excellent interface. This makes it possible for the fabrication of long-wavelength surface emitting lasers by the bonding technique.

关 键 词：键合 面发射激光器 光致发光谱 

分 类 号：TN248[电子电信—物理电子学]