绝缘体上硅动态阈值nMOSFETs特性研究(英文)  

Study on SOI Dynamic Threshold nMOSFETs

作　　者：毕津顺[1] 吴峻峰[1] 李瑞贞[1] 海潮和[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第1期5-8,共4页Chinese Journal of Electron Devices

摘　　要：基于绝缘体上硅技术,提出并研制动态阈值nMOSFETs结构.阐述了动态阈值nMOSFETs的工作原理.动态阈值nMOSFETs的阈值电压从VBS=0V时的580mV动态变化到VBS=0.6V时的220mV,但是这种优势并没有以增加漏电流为代价.因此动态阈值nMOSFETs的驱动能力较之浮体nMOSFETs在低压情况下,更具有优势.工作电压为0.6V时,动态阈值nMOSFETs的驱动能力是浮体的25.5倍,0.7V时为12倍.而且浮体nMOSFETs中的浮体效应,诸如Kink效应,反常亚阈值斜率和击穿电压降低等,均被动态阈值nMOSFETs结构有效抑制.A structure of SOI Dynamic Threshold （DT） nMOSFETs was proposed and fabricated. The principle of SOI DT nMOSFETs is explained. The threshold voltage of SOI DT nMOSFETs changes dynamically from 580 mV at VBs = 0 V to 220 mV at VBs = 0. 6 V without the cost of more leakage current. The experimental results demonstrate that SOI DT nMOSFETs have excellent drivability over SOI floating body （FB） nMOSFETs under ultra low work supply condition. The ratios of drain saturation current between SOI DT nMOSFETs and SOI FB nMOSFETs are 25.5 and 12, respectively, when the bias of gate is at 0. 6 V and 0. 7 V. Furthermore, floating body effects inherent in SOI FB nMOSFETs are effectively suppressed by SOI DT nMOSFETs such as Kink effect, abnormal subthreshold characteristics and earlier breakdown.

关 键 词：绝缘体上硅 动态阈值 浮体 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN368