势垒区δ掺杂量子阱Si／Ge_（0．3）Si_（0．7）的电子能带结构及电子密度分布  

Electronic Band Structures and Electronic Concentration Distributions of Quantum Wells Si/Ge_(0.3)Si_(0.7)With δ-Doping in Barriers

作　　者：徐至中[1] 

机构地区：[1]复旦大学物理系

出　　处：《Journal of Semiconductors》1996年第5期321-327,共7页半导体学报（英文版）

摘　　要：在有效质量近似基础上，采用非均匀网格有限差分法，通过对薛定谔—泊松方程的自洽求解，得到了生长在Ｇｅ０．３Ｓｉ０．７（００１）衬底上的势垒区８掺杂量子阶Ｓｉ／Ｇｅ０．３Ｓｉ０．７的势位及电子密度分布．讨论了量子阶的几何结构参数——阱宽及δ掺杂位置和δ掺杂密度对势阱内电子密度分布的影响．Abstract The potential and electronic concentration distributions of quantum wells Si/Ge0.3Si0.7 with δ-doping in barriers grown on Ge0.3Si0.7 (001 ) substrates are obtained by solving the Schrodingerl-Poisson equations self-consistently using the finite-difference method with a nonuniform mesh size in the frame of effective mass theory. The dependences of the geometric structure parameters-well widths, δ-doping positions and δ-doping impurity concentrations on the electronic concentration distributions in the well are discussed.

关 键 词：硅 GESI 量子阱 掺杂 电子能带结构 

分 类 号：TN305.3[电子电信—物理电子学]