硅（外延）片表面结构缺陷的光学无损检测  

Optical Non-Damaged Evaluation of Si Epitaxial wafer's Surface Defects

作　　者：邓江东[1] 李增发[1] 张光寅[1] 颜彩繁[1] 王宏杰[1] 

机构地区：[1]南开大学物理系,天津半导体材料厂

出　　处：《Journal of Semiconductors》1996年第5期365-369,共5页半导体学报（英文版）

基　　金：天津市自然科学基金

摘　　要：反射型魔镜检测方法（Ｒ－ＭＭ）是基于“局域波面畸变”缺陷成像原理的一种光学无损检测方法．我们采用Ｒ－ＭＭ方法检测了大量的硅片和硅外延片，非常方便直观地观测到漩涡缺陷、杂质条纹、管道等十多种反映实际生产工艺问题的缺陷，经化学腐蚀对比实验表明，检测结果是可靠的．在本文中，我们还着重讨论了外延层对衬底结构缺陷“放大”作用及其物理机制．并报道了缺陷种类与外延片类型之间存在的一些特殊对应关系．Abstract The reflection Magic-Mirror Approach (R-MM) is an optical nondamaged method based on the principle of the local distortion of perfect wave-front. In this paper,we have evaluated various Si wafers and epitaxial wafers, and observed about 30 kinds of typical patterns of surface imperfectons, including swirl defects, growth tube, impurity stripe, saw marks, start-like structure etc. Mainly, the phenomenon that the epi-layer 'amplifies' the defects in the substrate during epi-growth process is found and discussed.

关 键 词：缺陷 硅片 光学无损检测 半导体晶片 

分 类 号：TN304.12[电子电信—物理电子学]