低温退火对HgCdTe中波光导器件γ辐照效应的影响  

Effects of annealing on HgCdTe detectors after γ irradiation

作　　者：白云[1] 乔辉[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室

出　　处：《强激光与粒子束》2007年第2期301-304,共4页High Power Laser and Particle Beams

基　　金：上海市科学技术委员会部分资助课题(011661082;OIQA14045)

摘　　要：研究了低温退火对HgCdTe中波光导探测器γ射线辐照效应的影响。经过剂量为1Mrad的辐照后，器件的性能下降。对经过辐照的器件进行低温退火，退火温度范围为313～333K．退火时间在5～16h之间不等。在相同条件下测量了器件辐照前后及不同退火温度、不同退火时间下的体电阻、响应率、探测率和响应光谱。通过对比辐照前后及不同退火温度下性能参数的变化，分析了退火对器件的γ辐照效应的影响。实验表明：低温退火对辐照引起的性能的下降有一定的恢复作用。MWIR HgCdTe photoconductive detectors were irradiated with 1Mrad gamma dose, the devices were annealed at different temperature from 313 K to 333 K for different baking time. The body resistance, responsivity, response spectrum and detectivity of the devices were measured before and after irradiation and in different ways of annealing. The responsivity and detectivity of devices declined under the same conditions. The effects of annealing on the performance of the devices during the whole experiment were observed. The experiments indicate that proper annealing steps can recovery the responsivity of the devices partly. The 323 K may be the best temperature for annealing.

关 键 词：Γ辐照 HGCDTE 退火 辐照效应 

分 类 号：TN364[电子电信—物理电子学]