射频功率HBT热稳定性的一种新表征方法  

New Expression of the Thermal Stability for RF Power HBT

作　　者：金冬月[1] 张万荣 谢红云[1] 邱建军[1] 王扬[1] 

机构地区：[1]北京工业大学电控学院,北京100022

出　　处：《电子器件》2006年第4期1168-1171,共4页Chinese Journal of Electron Devices

基　　金：国家自然基金科学基金项目资助(60376033);北京市优秀跨世纪人才基金项目资助(67002013200301);模拟集成电路国家重点实验室基金项目;北京市市属市管高等学校人才强教计划;北京市市属市管高等学校中青年骨干教师资助项目

摘　　要：从热电反馈网络角度出发,在考虑到晶体管发射极电流随温度的变化、发射结价带不连续性(ΔEV)、重掺杂禁带变窄(ΔEg)及基极和发射极加入镇流电阻(RB和RE)等情况下,首次较全面地给出了功率晶体管热稳定因子S表达式。用该表达式可以很方便、明了地对功率双极晶体管进行热稳定性分析。分析了镇流电阻对射频功率晶体管安全工作区以及S的影响。结果表明,功率异质结双极晶体管(HBT)热稳定性优于同质结双极晶体管(BJT),适当选取RB和RE可使S=0,使由器件本身产生的耗散功率而引起的自加热效应被完全补偿,器件特性得以保持,不因自热而产生漂移,这是同质结器件所无法实现的。Taking into account of the temperature dependence of emitter current, the valence-band discontinuity at emitter junction （AEv）, the bandgap narrowing due to heavy doping （△Eg）, additional ballasting resistance in emitter and base （RB and RE）, a new analytical expression of the thermal stability factor S of power heterojunction bipolar transistor （HBT） have been derived completely based on the thermal-electric feedback network analysis. This expression can be used to analyze the thermal stability of power HBT conveniently and explicitly. Furthermore, the influence of ballasting resistance on both the safe operating area （SOA） and S of RF power HBT is investigated. The result shows that the stability of power HBT is superior to BJT＇s. By selecting RB and RE properly, S could be equal to zero, and therefore, self-heating effect induced by the device own internal power dissipation could be compensated completely. As a result, the electrical characteristic of device could be kept, and don＇t shift with self-heating effect. This couldn＇t be achieved in BJT.

关 键 词：异质结双极晶体管 热稳定因子 镇流电阻 

分 类 号：TN323[电子电信—物理电子学]