栅脉冲条件下GaN MESFET电子温度分布仿真  

Simulation of Electron Temperature Distributing on Gate-Pulse Condition in GaN MESFET

作　　者：罗大为[1] 卢盛辉[1] 罗谦[1] 杜江锋[1] 靳翀[1] 严地[1] 

机构地区：[1]中国电子科技大学微电子与固体电子学院,成都610054

出　　处：《微纳电子技术》2007年第2期66-69,87,共5页Micronanoelectronic Technology

摘　　要：利用数值模拟仿真对GaNMESFET在栅脉冲条件下的电子温度分布进行了研究。结果表明,在器件的栅下靠近漏端一侧的沟道处电子温度最高,当栅脉冲电压为-18V时可达6223K,并且电子温度从最高点向四周逐渐降低最后与晶格温度(300K)达到一致。同时还发现,电子温度与电场方向和电子电流方向密切相关,电子温度的最高点并不在电场的极大值处,而是在电场方向与电子电流方向一致之处。The electron temperature distributing in GaN MESFET on the gate-pulse condition was studied by numerical simulation. The results show that the electron temperature comes to a head in the channel under the gate, it will achieve 6223 K when the height of the pulse is -18 V. then it falls around gradually towards the lattice temperature （300 K） . Moreover, It is found that the electron temperature contacts closely with the direction of the electric field and the elec- tron current. The peak point of the temperature is not at where the electric field is maximum, it will be highest where the direction of theelectric field and the electron current are identical.

关 键 词：GaN金属半导体场效应晶体管 电子温度 仿真 

分 类 号：TN304[电子电信—物理电子学]