硅(100)晶面的凸角腐蚀及其补偿  

Convex Corner Undercutting and Compensation in Si(100)Wafer

作　　者：周丽玲[1] 闫卫平[1] 梁秀萍[2] 

机构地区：[1]大连理工大学电子与信息工程学院,辽宁大连116023 [2]大连理工大学物理系,辽宁大连116023

出　　处：《微纳电子技术》2007年第2期93-96,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(60574092;60174034)

摘　　要：在进行Si(100)台面腐蚀时,由于硅的各向异性腐蚀特性,凸角处呈现严重切削现象。凸角侧向腐蚀程度与腐蚀深度、腐蚀温度、腐蚀剂配比等诸多因素有关。针对方形补偿结构探讨了凸角腐蚀的补偿原理,设计了补偿版图,并在KOH腐蚀液中进行实验验证,获得了与理论分析结果相一致的直角凸面补偿效果。The comer undercutting was quite serious because of the anisotropic etching on crystalline Si （100） wafer. It was relative to the etching depths, temperature and the etchant proportion and types. The principle of compensation based on square compensation structure was discussed, and the graphics of compensation was designed and experimented with KOH etchant. The compensation effect of the convex comer accorded well with the theory.

关 键 词：各向异性腐蚀 凸角补偿 氢氧化钾腐蚀液 

分 类 号：TN304.12[电子电信—物理电子学] TG174.33[金属学及工艺—金属表面处理]