PIN半导体剂量率探测器的研究  

Measurement and study of the radiation background at interaction region of BEPCI

作　　者：杨世明[1] 李金[2] 宫辉[1] 邵贝贝[1] 

机构地区：[1]清华大学工程物理系,北京100084 [2]中国科学院高能物理研究所,北京100039

出　　处：《核电子学与探测技术》2007年第2期310-312,218,共4页Nuclear Electronics & Detection Technology

摘　　要：利用大面积PIN硅光电二极管作为探测器,对北京正负电子对撞机BEPCI在同步辐射运行、束流注入、束流切断等情况下对撞区的辐射水平进行测量,并分析辐射本底的强度、来源及特点;研究PIN半导体探测器在BEPCI对撞区的工作状况,为第三代北京谱仪BESIII的剂量率在线检测奠定基础。Using large area PIN Diodes as detectors, radiation background at interaction region of BEPCI was measured during synchrotron radiation running, beam injection and beam abort, the level, source and characteristic of the radiation background was discussed. The working status of the PIN Diodes installed near IR of BEPCI was studied, which helps the design of the online dose rate monitoring system for BE-SIII.

关 键 词：剂量率 束流管 PIN硅光电二级管 暗电流 

分 类 号：TL814[核科学技术—核技术及应用]