热壁外延（HWE）制备PbTe／PbSnTe异质结和超晶格  

HWE Grown PbTe/PbSnTe HJ and SL

作　　者：杨玉琨[1] 李文明[1] 熊欣[1] 于磊[1] 于泳[1] 杨易[1] 吴连民[1] 徐跃[1] 徐立兴[1] 

机构地区：[1]吉林大学分析测试实验中心,辽宁大学电子系

出　　处：《辽宁大学学报（自然科学版）》1996年第3期26-30,共5页Journal of Liaoning University：Natural Sciences Edition

摘　　要：本文于国内首次报导，利用简化的热壁外延（ＨＷＥ）装置在ＢａＦ＿２（１１１）衬底上生长了Ⅳ—Ⅵ族半导体单晶外延层，制备了ＰｂＴｅ／ＰｂＳｎＴｅ异质结和具有２０个周期的超晶格．测试结果表明，所制备的外延层的晶体结构完美，异质结具有良好的整流特性．通过Ｘ—光衍射求出了超晶格的周期．超晶格样品（２２２）衍射峰的卫星峰不对称，说明样品内有应变．In this paper, we report, for the first time at home, that the growth of Ⅳ -Ⅵ semiconductor single crystalline epilayer was Obtained and the preparation of PbTe/PbSnTe heterojunction and superlattice with 20 periods was prepared on BaF2(111 ) substrate by using simplified hot wall epitaxy(HWE) apparatus. The measurements show that the epilayer has perfect crystal structure and the heterojunction has gOOd Ⅰ-Ⅴ characteristic. The value of superlattice period was got by X -ray diffraction. The unsymmetrical satellite peak of(222) diffraction peak shows the presence of strain in this sample.

关 键 词：热壁外延 异质结 超晶格 碲化铅 铅锡碲化合物 

分 类 号：TN304.201[电子电信—物理电子学] O471.4[理学—半导体物理]