带温度补偿的6H-SiC PMOS模拟与分析  

Simulation and Analysis of 6H-SiC PMOS with Temperature Compensation

作　　者：韩茹[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《固体电子学研究与进展》2007年第1期7-12,共6页Research & Progress of SSE

基　　金：教育部重点科技项目(批准号:02074);国家部委预研项目(批准号:41308060105)

摘　　要：提出了一个在较宽温度范围内能精确描述6H-SiC PMOS性能的器件模型。该模型将阈值电压、沟道迁移率、体漏电流、源漏薄层电阻的温度效应等效为相应的补偿电流源,并计入界面态电荷高斯分布模型及体内Poole-Frenkel效应。模拟结果表明,阈值电压是引起高温条件下输出电流变化的主要因素,同时随着温度的升高,由于体内缺陷的存在导致体漏电流所占比例不断增大,逐渐成为Ids的重要组成部分。An analytical model which could be used to study the 6H-SiC PMOS device behavior in a wide temperature range has been developed. Modeled are the effects of temperature on the threshold voltage, channel mobility, the body leakage current, and the drain/source sheet resistances as several compensating current elements. It includes the Gauss model of interface traps and the Poole-Frenkel effect in the body. The simulation results showed that the large variation of the threshold voltage causes a huge change in the drain currents; the percent of body leakage current increases with the increase of temperature, which is due to the Poole-Frenkel effect caused by several defects; this current gradually plays a major role in the drain currents of SiC MOSFET.

关 键 词：碳化硅 补偿电流源 体漏电流 普尔-弗兰克效应 

分 类 号：TN305.93[电子电信—物理电子学]