GaN肖特基SIT的Monte Carlo模拟  

Simulation Studies of GaN-based Schottky Barrier SIT by Monte Carlo Approach

作　　者：郭宝增[1] 师建英[1] 宫娜[1] 

机构地区：[1]河北大学电子信息工程学院,河北保定071002

出　　处：《固体电子学研究与进展》2007年第1期13-17,共5页Research & Progress of SSE

基　　金：河北省教育厅科研基金(批准号:2003130)资助项目

摘　　要：用全带多粒子Monte Carlo模拟方法研究了GaN基肖特基势垒静电感应晶体管(SIT)的特性,给出了器件的电势、电场强度和电子浓度分布的Monte Carlo模拟结果。模拟得到的SIT输出特性曲线呈现非饱和特性,即类三极管特性。当VGS=0,VDS=35 V时,漏源电流为47 A/cm,跨导为300 mS/mm,电流截至频率为150 GHz。结果表明该器件具有大电流、高跨导和高频工作的潜力。We studied properties of GaN-based Schottkey barrier Static Induction Transistor （SIT） by the full-band ensemble Monte Carlo approach. The distributions of the electric potential, electric field, and electron concentration in SIT are presented. The output characteristics obtained with Monte Carlo approach show non-saturated characteristics, that is, characteristics of triode-like. At VGS=0 V and VDS=35 V, the drain-source current is 47 A/cm, transconductance is 300 ms/mm, and current cutoff frequency is 150 GHz. The simulation results indicate that GaN SITs have a potential for applications in high current, high transconductance, and high frequency.

关 键 词：蒙特卡罗方法 静电感应晶体管 氮化镓 

分 类 号：TN304.23[电子电信—物理电子学]