直流反应磁控溅射WO_3薄膜气敏特性研究  

Study on Gas Sensing-Characteristics of WO_3 Thin Film Manufactured by Dc Reactive Magnetron Sputtering

作　　者：尹英哲[1] 胡明[1] 冯有才[1] 陈鹏[1] 

机构地区：[1]天津大学电子信息工程学院

出　　处：《传感技术学报》2007年第4期760-762,共3页Chinese Journal of Sensors and Actuators

摘　　要：用直流反应磁控溅射法制成纳米结构的WO3薄膜气敏传感器,通过XRD,SEM和XPS对该薄膜的晶体结构和化学成分进行分析,研究了不同基片上制备的WO3薄膜的氨敏特性与薄膜厚度、退火温度的关系.实验得到的薄膜粒径大小约30-50nm,结果表明:在未抛光的三氧化二铝基片上沉积厚度为40nm的WO3薄膜,经过400℃退火,在体积分数为5×10-5NH3中的灵敏度达到300,而且气体选择性好,响应-恢复时间短,可以作为理想的氨敏元件.WO3 nano-particles thin film gas sensors have been prepared by dc reactive magnetron sputtering. The film morphology, crystalline phase and chemical composition have been characterized through XRD, SEM, XPS analysis. NH3 gas sensing characteristics of WO3 thin film on different substrate for film thickness and annealing temperature were discussed. The grain size of films prepared was nearly 30-50 nm, the sensitivity of WO3 thin film on unpolished alumina of 40 nm thickness annealed at 400℃to 5 ×10^-5 NH3 gas reached to 300. Furthermore, the film shows good selectivity and its electric response suggest possibility of utilizing the ideal NH3 gas sensors.

关 键 词：WO3薄膜 氨敏传感器 直流反应磁控溅射 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置] TN304.055[自动化与计算机技术—控制科学与工程]