表面二次阳极氧化对HgCdTe光导器件性能的影响  

Influence of Second Anodization on Characteristics of HgCdTe Photoconductive Detectors

作　　者：汤英文[1] 朱龙源[1] 游达[1] 许金通[1] 刘诗嘉[1] 庄春泉[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083

出　　处：《半导体光电》2007年第1期72-75,共4页Semiconductor Optoelectronics

摘　　要：采用微波光电导衰退法(μ-PCD)测试了二次阳极氧化膜和传统氧化膜钝化的中波n型HgCdTe芯片的少子寿命。利用俄歇电子能谱(AES)研究了传统方法与新方法生成的氧化膜的组分变化。结果表明二次阳极氧化能显著提高少数载流子寿命,采用此工艺制作的光导器件的信号、响应率、D*优于常规方法制作的器件。Minority-carrier lifetimes of the n-HgCdTe which were passivated by the second anodization or traditional method were measured at 85 K using the microwave photoconductivity decay（μ-PCD） lifetime screening technique.Minority-carrier lifetimes were improved.The quality of the two films was measured by AES.The influence of the second anodization on characteristics of HgCdTe photoconductive detectors was investigated,and the signal,responsivity and D^＊ of HgCdTe photoconductive detectors passivated by the second anodization were improved.

关 键 词：HGCDTE 阳极氧化 微波光电导衰退法 俄歇电子能谱 光导型探测器 

分 类 号：TN215[电子电信—物理电子学]