多晶硅薄膜残余应力显微拉曼谱实验分析  

EXPERIMENTAL MICRO-RAMAN ANALYSIS OF RESIDUAL STRESS IN POLYSILICON FILMS

作　　者：吴昊[1] 孟永钢[1] 苏才钧[1] 郭占社[1] 温诗铸[1] 

机构地区：[1]清华大学摩擦学国家重点实验室,北京100084

出　　处：《机械强度》2007年第2期233-236,共4页Journal of Mechanical Strength

基　　金：国家自然科学基金项目(50525515);中国基础研究计划项目(2003CB716205);清华大学基础研究基金项目(Jc2003013)支持~~

摘　　要：利用显微拉曼谱对桥式多晶硅薄膜梁的残余应力进行测量,该多晶硅薄膜采用典型的MEMS(micro-electro-mechanical systems)工艺制造。实验结果表明,多晶硅薄膜梁的中部存在很大的拉伸残余应力(约1GPa),且多晶硅薄膜的残余应力沿梁长方向大致呈对称分布,这种内应力分布与制造过程中的ICP(inductively-coupled plasma)工艺密切相关。多晶硅薄膜梁在残余应力作用下的变形情况可以通过WYKO白光形貌仪准确地表征,经过ANSYS计算,薄膜残余应力分布状况与显微拉曼谱法的测量结果吻合。因而,显微拉曼谱法是测量多晶硅薄膜残余应力的一种准确而可靠的方法。Micro-Raman spectrum was used to measure the residual stress in the stand-alone polysilicon film which was fabricated in the typical MEMS （micro-electro-mechanical systems） processes. The experimental results showed that much high tensile residual stress （about 1 GPa） existed in the middle of the polysilicon film, and the residual stress distributed almost symmetrically along the length of the film, which was determined by the fabricated process ICP （ inductively-coupled plasma）. The deformation of the thin film was characterized by the WYKO surface profiler in order to calculate the residual stress by means of ANSYS. They were coincident when the calculated result was in comparison with the Raman analysis. So micro-Raman analysis was an accurate and reliable method in measuring the residual stress in thin films.

关 键 词：拉曼谱 多晶硅 薄膜 残余应力 

分 类 号：TB302.3[一般工业技术—材料科学与工程]