5Gb/s单片集成GaAs MSM/PHEMT 850nm光接收机前端  

5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End

作　　者：焦世龙[1] 陈堂胜[2] 钱峰[3] 冯欧[3] 蒋幼泉[3] 李拂晓[3] 邵凯[3] 叶玉堂[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]单片集成电路与模块国家级重点实验室,南京210016 [3]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2007年第4期587-591,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60277008);单片集成电路与模块国家级重点实验室基金(批准号:51491050105DZ0201)资助项目~~

摘　　要：采用0.5μm GaAs PHEMT工艺研制出了一种单片集成850nm光接收机前端,它包括金属-半导体-金属(MSM)光探测器和分布放大器.探测器光敏面积为50μm×50μm,电容为0.17pF,4V偏压下的暗电流小于17nA.分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ;在50MHz^16GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03~6.5dB之间.光接收机前端在输入2.5和5Gb/s非归零伪随机二进制序列调制的光信号下,得到较为清晰的输出眼图.An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process, which comprises a metal-semiconductor-metal （MSM） photodetector and a distributed amplifier. The photodetector has a photosensitive area and capacitance of 50μm × 50μm and 0.17pF, respectively, as well as a dark current of less than 17nA under a bias of 4V. The distributed amplifier has a - 3dB bandwidth close to 20GHz, with a transimpedance of 46dBΩ. In the range of 50MHz-16GHz,both the input and output voltage standing wave ratio are less than 2. The measured noise figure varies form 3.03 to 6.5dB. The output eye diagrams for 2.5Gb/s and 5Gb/s NRZ pseudorandom binary sequence are also obtained.

关 键 词：金属-半导体-金属光探测器 分布放大器 光接收机 眼图 

分 类 号：TN851[电子电信—信息与通信工程]