不同择优取向的ZnO薄膜的制备  

Preparation of ZnO Thin Films with Different Preferential Orientations Using RF Magnetron Sputtering

作　　者：陆液[1] 李勇强[1] 朱兴文[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《压电与声光》2007年第2期204-206,共3页Piezoelectrics & Acoustooptics

基　　金：上海市重点学科基金资助项目(T0101)

摘　　要：采用射频磁控溅射法在载玻片上制备了不同择优取向的ZnO薄膜。结果表明，溅射功率在100～380W范围内制备的ZnO薄膜呈（101）择优取向性，当功率上升至550W时，薄膜则为（100）取向；基片温度升高有利于（002）面的生长，当基片温度为250℃时，在溅射功率为200W时即可制得（002）面择优取向的薄膜。热处理温度的提高有助于（100）和（101）面的择优取向，而对（002）面的取向不利。同时，该文对ZnO薄膜不同择优取向生长的机制进行了探讨。Zinc Oxide thin films were deposited on glass substrate by RF magnetron sputtering. The effects of preparation conditions on the orientation of ZnO thin films were investigated. The results showed that the films prepared under RF power of 100-380 W preferentially oriented along （101） plane, and exhibited （100） preferred orientation under 500 W. When the substrate temperature was heated to 2500℃, the ZnO film with （002） preferential orientation could be prepared under 200 W. Heat-treatment at the increased temperature enhanced the orientation of （100） and （101）, while weakened the grain growth along （002） orientation. The grain growth mechanism of ZnO thin films with different preferential orientations was also discussed in this paper.

关 键 词：氧化锌薄膜 (100)定向 (101)定向 磁控溅射 

分 类 号：O484.1[理学—固体物理]