SU-8胶紫外光刻的尺寸精度研究  

Study on dimensional precision of UV-lithography on SU-8 photoresist

作　　者：杜立群[1] 秦江[1] 刘冲[1] 朱神渺[2] 李园园[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116023 [2]大连理工大学辽宁省微纳米技术及系统重点实验室,辽宁大连116023

出　　处：《光学精密工程》2007年第4期447-452,共6页Optics and Precision Engineering

基　　金：国家科技支撑计划项目(No.2006BAF04B13);国家自然科学基金项目(No.50675025)

摘　　要：研究了衍射效应对SU-8胶紫外光刻尺寸精度的影响。根据菲涅耳衍射理论建立了紫外曝光改进模型,预测微结构的尺寸,分析了光刻参数变化对尺寸的影响。为了更好地与数值模拟结果进行比较,以硅为基底,进行了SU-8胶紫外光刻的实验研究。实验分四组,实验中掩模的特征宽度分别取50μm、100μm、200μm和400μm,SU-8胶表面的曝光剂量取400 mJ/cm2。用扫描电镜测量了微结构的顶部线宽、底部线宽和SU-8胶的厚度,用MATLAB软件对紫外曝光过程中SU-8胶层内曝光剂量的分布情况进行了数值模拟,数值模拟结果与实验结果基本吻合。数值模拟结果为进一步的实验研究提供了光刻参数的参考值。The impact of diffraction effect on the dimensional precision of UV-lithography based on SU-8 photoresist was investigated. An improved UV exposure model based on Fresnel diffraction theory was proposed to use in predicting the dimensions of photoresist microchannels and their variations with changes in the lithographic parameters. In four different experiments, the characteristic width of photo masks were 50 μm, 100 μm, 200 μm and 400 μm, respectively, and the exposure dose on the surface of SU-8 photoresist was 400 mJ/cm^2. In the experiments, the silicon was chosen as substrate. The top width, bottom width and thickness of SU-8 photoresist of cross section of microchannel in four different experiments were measured with SEM. The distribution of exposure dose in the SU-8 photoresist was simulated numerically with MATLAB. Comparing the simulative results with experimental results, a good agreement between them is acquired. The simulation results can be used to instruct the further experiments.

关 键 词：SU-8胶 菲涅耳衍射 紫外光刻 尺寸精度 MATLAB 

分 类 号：TN305.7[电子电信—物理电子学]