等离子体基离子注入制备TiN膜的成分结构  

Composition and structure of TiN film prepared by plasma-based ion implantation

作　　者：李金龙[1] 孙明仁[1] 马欣新[1] 唐光泽[1] 金银玉[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《材料科学与工艺》2007年第1期40-43,共4页Materials Science and Technology

基　　金：高等学校博士学科点专项科研基金资助项目(20040213048)

摘　　要：采用Ti、N等离子体基离子注入和先在基体表面沉积纯钛层然后离子注氮混合两种方法在铝合金基体上制备了TiN膜.利用XPS分析了两种方法制备TiN薄膜的成分深度分布和元素化学价态,并用力学性能显微探针测试对比了TiN膜的纳米硬度.研究表明:两种方法制备的薄膜均由TiN组成,Ti、N等离子体基离子注入薄膜中Ti/N≈1.1,而离子注入混合薄膜中Ti/N≈1.3,Ti、N等离子体基离子注入薄膜表面区域为TiN和TiO2的混合组织,TiN含量多于TiO2,离子注入混合薄膜表面主要是TiO2;Ti、N等离子体基离子注入所制备的薄膜的纳米硬度峰值为12.26 GPa,高于离子注入混合的7.98 GPa.TiN films were prepared by two methods on the aluminium alloy. One method is plasma-based ion implantion of Ti and N, and another is N ion implantation into Ti film, which was deposited on aluminum alloy. The composition depth profiles and element chemical states of the TiN films were analyzed using XPS, and the nano-hardness of the TiN films was measured by mechanical properties microprobe. The results show that the films prepared by both methods were mainly composed of TiN, but the Ti/N ratio in both TiN films is different and they are 1.1 and 1.3 for plasma-based ion implantion and N ion implantation mixing film, respectively. The surface of the Ti and N plasma-based ion implantion film was composed of TiN and a little TiO2, however surface of N ion implantation mixing film was dominated by TiO2. The hardness of 12. 26 GPa for plasma-based ion implantion film is higher than that of 7. 98 GPa for N ion implantation mixing film.

关 键 词：等离子体基离子注入 TIN膜 XPS 成分深度分布 元素化学价态 纳米硬度 

分 类 号：TG174.4[金属学及工艺—金属表面处理]