先进的小尺寸金属栅CMOS工艺开发  

Development of an Advance Small Size Metal-Gate CMOS Process

作　　者：苏巍[1] 涂继云[1] 

机构地区：[1]东南大学IC学院,南京210096

出　　处：《电子与封装》2007年第1期36-38,48,共4页Electronics & Packaging

摘　　要：利用校准之后工艺模拟软件TSUPREM-4和器件模拟软件MEDICI,采用工艺模拟与实际工艺流片相结合的方法对沟道尺寸为0．8μm-2μm之间的金属铝栅CMOS进行器件模拟、试验及分析,提出了相应的工艺及改进措施,确定了器件的结构、工艺等参数,提出了一个可行的工艺流程。通过对晶体管部分特征参数和电学特性的详细分析,最终获得了满意的设计参数和性能。同时通过对在此工艺平台下的各种端口的ESD保护结构进行试验与分析,找出满足2kV HBM模式的ESD保护结构与设计规则。This paper describes the device simulation, experiment and analysis on advanced small size MetalGate CMOS which channel length from 0.8 μ m to 2.0 μ m, through process simulation and real wafers processing integration base on the TCAD software TSUPREM-4 and MEDICI. And it presents the final feasibility process and improved measurement after confirming the device structure and process parameter. By detailed analysis of transistor character parameter and electricity characteristic, achieve the satisfying design parameter and performance. At same time, obtaining the ESD protect structure and design rule which can meet HBM 2kV through ESD protection testing and analysis for I/O port under this process platform.

关 键 词：TCAD 工艺模拟 器件模拟 金属栅CMOS 

分 类 号：TN305[电子电信—物理电子学]