氢化物气相外延自支撑GaN衬底制备技术研究进展  

Reseach and Prospects on the Techniques of Preparation for Free-standing GaN Substrates by Hydride Vapor Phase Epitaxy

作　　者：陈洪建[1] 张维连[1] 陈贵峰[1] 李养贤[1] 

机构地区：[1]河北工业大学半导体材料研究所,天津300130

出　　处：《河北工业大学学报》2007年第2期15-19,共5页Journal of Hebei University of Technology

基　　金：河北省自然科学基金(2007000119)

摘　　要：氢化物气相外延(HVPE)是制备氮化镓(GaN)衬底最有希望的方法.本文介绍了氮化镓材料的电学、光学性质及重要用途,总结了GaN体单晶及薄膜材料制备方法,描述了氢化物气相外延技术原理,分析了HVPE制备自支撑(Free-Standing)GaN衬底方法,综述了HVPE技术国内外研究进展,指出今后研究方向.Hydride Vapor Phase Epitaxy （HVPE） is a promising growth method for obtaining a GaN substrate. In this paper we have introduced the electrical, optical properties of GaN material and its important use. The methods for the preparation of GaN material are summaried. We also have discribed the technic theory of HVPE and analyzed the approach to prepare the Free-standing GaN substrates by HVPE. Emphasis is placed on recent developments both domestic and ab- road. Further research is point out lastly.

关 键 词：GAN 自支撑GaN HVPE 金属有机化学气相沉积(MOCVD) 

分 类 号：TN304.054[电子电信—物理电子学]