氮化硅/环氧复合电子基板材料制备及性能  

Fabrication and performance of Si_3N_4/epoxy composite used for electronic substrate

作　　者：沈源[1] 傅仁利[1] 何洪[1] 韩艳春[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《热固性树脂》2007年第1期16-18,35,共4页Thermosetting Resin

基　　金：国家自然科学基金(50472019)

摘　　要：以Si_3N_4粉末作为增强组分与环氧树脂进行复合,采用模压法制备了氮化硅/环氧树脂复合电子基板材料。研究了Si_3N_4含量对复合材料导热性能和介电性能的影响。研究结果表明,随着Si_3N_4含量的增加,复合材料中填料形成导热网络,复合材料的热导率也随之增加,当体积填充量为35%时,导热系数达到1．71 W/m·K。复合材料的介电常数随Si_3N_4含量的增加而增加,但在氮化硅陶瓷颗粒的体积分数达到35%时仍维持在较低的水平(7．08,1 MHz)。A kind of composite substrate was fabricated using Si3 N4 powder as filler and epoxy as matrix and employing the method of press molding. The effect of volume fraction of Si3 N4 on the thermal conductivity of the composite was investigated and the dielectric constant of the composite was evaluated. Experimental results showed that with the filler content increasing, a thermally conductive network was formed in the composite, thus thermal conductivity and dielectric constant of the composite increased. Thermal conductivity was 1,71W/ m· K when the volume fraction of Si3 N4 reached 35% but its dielectric constant still kept at a relatively low level （7.08 at 1 MHz）.

关 键 词：氮化硅 环氧树脂 电子基板材料 导热性能 介电性能 

分 类 号：TB332[一般工业技术—材料科学与工程]