双注入多晶硅发射极高性能BiCMOS技术研究  

A High Performance BiCMOS Technology Using Double Implanted Polysilicon Emitter

作　　者：何林[1] 

机构地区：[1]电子工业部第24研究所

出　　处：《微电子学》1997年第1期14-16,共3页Microelectronics

摘　　要：研究了一种ＢｉＣＭＯＳ新技术，基区和发射区均通过发射极多晶注入，使形成的基区更浅、更窄；通过等平面氧化形成的鸟嘴，将版图设计为３．０μｍ的发射极条宽“挤”为２．０μｍ左右，提高了器件性能。在器件结构及工艺设计中，尽可能提高工艺的兼容性，简化工艺。该技术已应用于性能优良的双极、ＭＯＳ器件。A new BiCMOS technology is described,in which both base and emitter regions are formed by implanting through emitter polysilicon,so that the base region is shallower and narrower.The 3 μm emitter in the layout design is 'sqeezed' into a 2 μm line by the 'bird beak'formed by isoplanar oxidation,thus improving device performance.The simplification and compatibility of the technology are fully considered in the device structure and process design.This new technology has been used in the development of high performance bipolar,and MOS devices,BiCMOS cells and 8 channel analog switches.

关 键 词：多晶硅发射极 双注入 双极型 集成电路 

分 类 号：TN431.05[电子电信—微电子学与固体电子学]