改进的电压倍增器模型及其应用  

Improved Voltage Multiplication Model and Its Application

作　　者：于宗光[1,2] 魏同立[1,2] 许居衍 王鸿宾[1,2] 

机构地区：[1]东南大学电子系 [2]华晶集团中央研究所

出　　处：《东南大学学报（自然科学版）》1997年第1期82-86,共5页Journal of Southeast University：Natural Science Edition

基　　金：江苏省青年科技基金

摘　　要：分析了Ｄｉｃｋｓｏｎ电压倍增器模型的局限性，提出了适用于Ｎ阱硅栅ＣＭＯＳ工艺的电压倍增器模型．用该模型研究了升压值与升压级数、升压时钟、升压管尺寸等的关系．模型计算结果和ＳＰＩＣＥ模拟结果吻合良好．在考虑了电流驱动能力后。After analyzing of limit for Dickson voltage multiplication model,an improved voltage multiplication model which suits for the N well CMOS process is presented.Then, based on this model,the dependence of output voltage on vlotage multiplication stages,clocky,size of voltage multiplier transisters, is studied.The results concide with that of the SPICE simulation. In consideration of current driving capability,the optimization design is accomplished.

关 键 词：电压倍增器 升压电路 CMOS 升压值 

分 类 号：TM423[电气工程—电器] TN386.1[电子电信—物理电子学]