气流场强度对直流磁控溅射ZAO薄膜性能的影响  

Effect of Current Field Intensity on Performance of ZAO Thin Films Deposited by DC Magnetron Sputtering

作　　者：殷胜东[1] 马勇[1] 靳铁良[2] 

机构地区：[1]重庆师范大学物理学与信息技术学院,重庆400047 [2]平顶山学院物理学与电气信息工程学院,平顶山467002

出　　处：《材料导报》2007年第5期135-137,共3页Materials Reports

基　　金：重庆市教委科研基金资助项目(040810)

摘　　要：用含2%Al的Zn/Al合金靶材,在不同气流场强度下使用直流反应磁控溅射法在玻璃衬底上制备了ZAO(ZnO∶Al)透明导电薄膜样品。定义气流场强度等于总气流量除以总气压。结果表明:气流场强度的大小对ZAO薄膜的表面形貌和电导率有较大影响,对可见光的透射率影响不大。在Ar气压强为0.3Pa,流量为22sccm,O2气压强为0.08Pa,流量为10sccm,气流场强度约为84sccm/Pa时制备ZAO薄膜的最低电阻率为4.2×10-4Ω.cm,可见光透射率为90%。ZAO（ZnO ： Al）transparent conductive films are prepared by DC magnetron reactive sputtering of an alloy target（98wt% Zn-2wt% Al）on glass substrates. In this paper, it＇s defined that the current field intensity equals all gas flux divided by all gas pressure. The influence of current field intensity on the microstructures, optical and electrical properties of ZAO films is studied. The results show that the current field intensity is a dominant factor for variable microstructures and electrical properties of the ZAO thin films. The lowest resistivity is 4. 2×10^-4 Ω·cm and visible transmittance is 90% on the condition that current field intensity is 84sccm/Pa which results from the situation that the gas pressures of O2 and Ar are 0. 08 Pa and 0. 3 Pa respectively,and the gas fluxes of O2 and the Ar are 10sccm and 22sccm separately.

关 键 词：ZAO薄膜 直流反应磁控溅射 气流场强度 电导率 透射率 

分 类 号：O484[理学—固体物理]