一种高性能2.0um BiCMOS工艺  

A High-Performance 2. 0um BiCMOS Technology

作　　者：周均[1] 袁博鲁[1] 叶青松 

机构地区：[1]电子工业部第二十四所,四川重庆630060

出　　处：《电子器件》1997年第1期56-62,共7页Chinese Journal of Electron Devices

摘　　要：本文介绍一种高性能2.0umBiCNIOS工艺.该工艺采用P型衬底,N型P型双埋层,N型薄外延结构,掺杂多晶作为CMOS晶体管栅极和双极晶体管的发射极.CMOS晶体管源漏自对准结构,钛和铝双层金属作为元件互连和PECVDSiNx介质作为钝化薄膜.用该工艺研制的23级与非门环型振荡器单级门延迟时间达3ns.A high performance 2. 0-um BiCMOS technology was developed. This technology was based on Bipolar technology. Double buried layers, N type epitaxial layer, double layers of metal Ti-Al and PECVD SiNx were used. Doped ploysilicon as the gate of CMOS devices and the emitter of NPN transistor and the self-aligned structure for CMOS devices were developed. With this technology a 23-stages NAND ring oscillator was designed and manufactured. 3-ns propagation delay time was obtained.

关 键 词：自对准 多晶硅发射极 环型振荡器 双极晶体管 

分 类 号：TN322[电子电信—物理电子学] TN386