基于InGaP/GaAs HBT的X波段MMIC功率放大器研制  

X Band MMIC Power Amplifier Based on InGaP/GaAs HBT

作　　者：陈延湖[1] 申华军[1] 王显泰[1] 葛荠[1] 李滨[1] 刘新宇[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2007年第5期759-762,共4页半导体学报（英文版）

摘　　要：研制了X波段的InGaP/GaAs HBT单级MMIC功率放大器,该电路采用自行开发的GaAs HBT自对准工艺技术制作.电路偏置于AB类,小信号S参数测试在8～8·5GHz范围内,线性增益为8～9dB,输入驻波比小于2,输出驻波比小于3,优化集电极偏置后,线性增益为9～10dB.在8·5GHz进行连续波功率测试,在优化的负载阻抗条件下,P1dB输出功率为29·4dBm,相应增益7·2dB,相应PAE>40%,电路的饱和输出功率Psat为30dBm.An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported. The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit. The PA circuit is biased at the class AB state. The small signal S parameter test shows that at 8-8.5GHz,the linear power gain is 8-9dB,VSWRin 〈2,and VSWRout 〈3. After optimizing the collector bias,the linear gain is improved to 9-10dB. Under an 8. 5GHz CW signal power test with optimized loading conditions, the P1dB of the circuit is 29. 4dBm,relevant power gain is 7.2dB, and relevant PAE is 42 %. The Psat, of the circuit is 30dBm.

关 键 词：HBT MMIC X波段 

分 类 号：TN722.75[电子电信—电路与系统]