硅基PZT压电薄膜微传感器的结构设计和实验研究  

Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors

作　　者：娄利飞[1] 杨银堂[1] 李跃进[1] 张萍[1] 

机构地区：[1]西安电子科技大学微电子学所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《Journal of Semiconductors》2007年第5期778-782,共5页半导体学报（英文版）

摘　　要：对硅基锆钛酸铅(PZT)压电薄膜微传感器进行了结构和版图设计.根据MEMS加工工艺和标准硅基IC工艺的特点,获得了硅基PZT压电薄膜微悬臂梁结构系统工艺流程中的关键工艺技术和典型工艺条件.对PZT压电薄膜的制备和微细图形化进行了较为详细的实验研究,最后成功地制备出硅基PZT压电薄膜微传感器样品.这对集成化芯片系统的进一步发展打下了良好的实验基础.The structural and territorial design of PZT thin film micro-sensors is processed. Using MEMS processes and standard silicon-based IC,the key techniques and technical conditions are obtained for PZT thin film micro-cantilever beams based on silicon. At the same time,the preparation and micro-pattern etching techniques of PZT thin films are investigated by experiment. Finally,a PZT thin film micro-sensor is successfully etched and the experimental foundations are laid for the research and development of the system on a chip.

关 键 词：锆钛酸铅 压电薄膜 微传感器 湿法化学刻蚀 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]