电压-门控Na^+通道基因突变与癫痫  

Mutations of voltage-gated sodium channels and epilepsy

作　　者：王军[1] 欧绍武[1] 王运杰[1] 

机构地区：[1]中国医科大学附属一院神经外科,沈阳110001

出　　处：《国际病理科学与临床杂志》2007年第2期152-155,共4页Journal of International Pathology and Clinical Medicine

基　　金：辽宁省教育厅资助项目(05L500)~~

摘　　要：电压-门控Na+通道和癫痫的关系十分密切,许多癫痫综合征的发生已被证明是由Na+通道基因突变引起,且编码α和/或β亚单位的基因发生突变均可以引起癫痫。基因突变后产生的异常Na+通道蛋白引起癫痫的发病机制仍不明确。基因和细胞治疗为治疗离子通道基因突变引起的癫痫提供了新的思路。The voltage-gated sodium channels have a close relationship with epilepsy, and many epileptic syndromes are proved to be caused by mutations of voltage-gated sodium channels. And mutation of either α subunit or β subunit may cause epilepsy. The mechanisms of epilepsyl remain unknown and the gene therapy and cell therapy provide a new method for curing epileptic syndromes caused by mutations of voltage-gated salium channels.

关 键 词：电压-门控Na^+通道 基因突变 基因治疗 细胞治疗 癫痫 

分 类 号：R742.1[医药卫生—神经病学与精神病学]