直流反应磁控溅射法注积ZrN薄膜  

PROPERTIES OF THE ZIRCONIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING

作　　者：吴大维[1] 张志宏[1] 罗海林[1] 郭怀喜[1] 范湘军[1] 

机构地区：[1]武汉大学

出　　处：《材料研究学报》1997年第2期207-208,共2页Chinese Journal of Materials Research

基　　金：国家自然科学基金!59571047

摘　　要：采用直流反应磁控溅射法淀积ZrN薄膜发现在（100）晶向硅片上ZrN薄膜按（111）晶向生长，控制生长工艺可以获得ZrN（111）晶向的外延生长膜．ZrN films were deposited by reactive magnetron sputtering.The crystalline quality of ZrN films was investigated by X-ray diffraction. The results indicated the growth of zirconium nitride had the(l I l) orientation priority. Controlling the growth conditions,a (111) oriented epitaxial ZrN film could be obtained. The chemical properties and thermal stability were also investigated.

关 键 词：薄膜 反应磁控溅射 外延生长 氮化锆 

分 类 号：TB43[一般工业技术] O484.1[理学—固体物理]