一种新型的激光——等离子体辅助化学气相沉积装置的研究  

Study on New Style of Device for Laser-Plasma-Assisted Chemical Vapour Deposition

作　　者：陆宗仪[1,2] 李文梅 安世民[1,2] 郭宝海 夏元良[1,2] 徐军 梅雨[1,2] 

机构地区：[1]扬州大学工学院 [2]大连理工大学

出　　处：《材料科学与工艺》1997年第1期90-94,共5页Materials Science and Technology

基　　金：国家自然科学基金

摘　　要：为探索用激光和等离子体共同辅助化学气相沉积（ＣＶＤ）过程以实现室温沉积的可能性，设计并制造了一种新型的ＣＶＤ装置，实际进行了由ＳｉＨ４－ＮＨ３－Ｎ２体系制取Ｓｉ３Ｎ４膜的试验。结果表明，激光和等离子体是可以相互促进、共同辅助ＣＶＤ过程的，且两者均处于较低的能量水平；整个沉积过程在室温下进行，仅在试样表面局部区域有升温，从而可以实现保持基体原有性能的沉积和选区沉积，拓宽ＣＶＤ的应用前景。For sake of probing the possibility of CVD at room temperature by way of laser plasma assisted technique, a new style of CVD device has been designed and manufactured, and was used on practical preparation of Si 3N 4 film from SiH 4 NH 3 N 2 system.The results indicate: laser and plasma can jointly assist CVD process and can helpe ach other forward, and both of them were at lower energy level; whole CVD process performed at room temperature, increased temperature was limited within a small local area on the surface of sample, so that the deposition keeping original properties of sample and selected area deposition were feasible, the prospects of application of CVD are improved.

关 键 词：化学气相沉积 激光 等离子体 氮化硅膜 

分 类 号：TG174.442[金属学及工艺—金属表面处理]