选择性生长技术制备GaN薄膜的研究进展  

The Development of the Study on Selectively Growth of GaN

作　　者：张帷[1] 刘彩池[1] 郝秋艳[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《半导体技术》2007年第2期93-96,共4页Semiconductor Technology

基　　金：教育部新世纪优秀人才支持计划;河北省自然科学基金(E2005000042)

摘　　要：Ⅲ族氮化物化合物半导体GaN是目前半导体领域的研究热点之一,具有宽禁带、高温下物理、化学性质稳定等特点,在光电子、微电子等领域有广泛的应用。降低缺陷密度制备高质量的GaN外延层是生产高性能和高寿命GaN器件的关键,也是人们始终致力于研究的内容,本讨论对近年来发展的一种采用选择性生长技术生长GaN的方法、原理、进展情况进行了介绍。Recently, GaN as one of the Ⅲ-nitride semiconductor, has attracted great interest because of the large amount of applications in optoelectronic and microelectronic device field due to its merits of large, direct bandgap, high physics and chemical stability at high temperature. To fabricate the GaN device with high electric property and life performance, the most critical method is to deduce the density of dislocations to pro- duce a high-quality GaN layer; so many studies are on this field. Selectively growth of GaN as a new scientific and technological method was developed during these years. The method, theory and the development of selectively growth were summarized.

关 键 词：氮化镓 外延 横向过生长 悬挂式外延生长 

分 类 号：TN304.054[电子电信—物理电子学]