一种高线性度CMOS混频器的设计  

Design of a High-Linearity CMOS Mixer

作　　者：吴明明[1] 叶水驰[1] 

机构地区：[1]哈尔滨工业大学卫星技术研究所,哈尔滨150080

出　　处：《半导体技术》2007年第2期117-120,共4页Semiconductor Technology

基　　金：国家973科研计划项目(51312)

摘　　要：采用线性化技术改进的混频器结构提高了线性度。采用TSMC 0．18μm RF CMOS模型进行了电路仿真。仿真结果:在电源电压为1．8 V时,输入三阶截断点(IIP3)为10．3 dBm,输入1 dB压缩点(P-1dB)为-3．5 dBm,增益为9．2 dB,单边带噪声系数为17 dB。The performance of linearity was improved using the proposed architecture. The simulation was carried out based on TSMC 0.18 μm RF CMOS model. The result shows that the supply voltage is 1.8 V, the conversion gain is 9.2 dB, input 1 dB compression point is about -3.5 dBm while IIP3 point is at 10.3 dBm, and single side-band noise figure is 17 dB.

关 键 词：双平衡混频器 互补金属氧化物半导体工艺 射频集成电路 

分 类 号：TN773[电子电信—电路与系统]