长波HgCdTe光导探测器液氮温度电阻和室温电阻比值计算  

Calculation of the Ratio of LWIR HgCdTe Photoconductive Detector Resistance at Room and Liquid nitrogen Temperatures

作　　者：蔡毅[1] 姚英[1] 梁宏林[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1997年第2期1-2,共2页Infrared Technology

摘　　要：研究了长波ＨｇＣｄＴｅ光导探测器液氮温度电阻和室温电阻比值计算问题。结果表明：制成器件后，表面电导、材料电导率的变化和背景辐射都将使器件液氮温度的电阻减小，进行这三项修正后。The ratio of LWIR HgCdTe photoconductive detector resistance at room and liquid-nitrogen temperatures is calculated The result shows that the surface conduction,material conductivity changes,and background radiation have influence on the detector resistance at liquid-nitrogen temperature Calculation dataa grees with experimental results after having taken into account of these factors

关 键 词：光导探测器 器件电阻 碲镉汞 液氮温度电阻 

分 类 号：TN215.02[电子电信—物理电子学]