背景辐射对光导HgCdTe探测器电阻的影响  

Influence of Background Radiation on the Resistance of Photoconductive HgCdTe Detectors

作　　者：姚英[1] 蔡毅[1] 梁宏林[1] 

机构地区：[1]昆明物理研究所

出　　处：《红外技术》1997年第1期1-5,共5页Infrared Technology

摘　　要：测量了室温和液氮背景辐射条件下长波光导ＨｇＣｄＴｅ探测器的电阻，从电阻的变化研究了背景辐射对器件电阻的影响，结果表明：在高性能探测器中，室温背景辐射造成探测器电阻的相对变化量约为１０％，而且。The resistance of LWIR photoconductive HgCdTe detectors are measured at room temperture and liquid Nitrogen. Influence of background radiation on the device resistance is studied. The experiments show that room temperature background radiation produces about 10% resistance change correlated with the responsivity.

关 键 词：光导探测器 器件电阻 背景辐射 

分 类 号：TN215[电子电信—物理电子学]