向32nm迈进的光刻技术  

Lithography Techniques for the Node of 32 nm

作　　者：童志义[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京东燕郊101601

出　　处：《电子工业专用设备》2007年第4期8-16,共9页Equipment for Electronic Products Manufacturing

摘　　要：概述了用于45nm节点的各种光刻技术发展现状及技术路线,结合国际半导体技术发展指南(ITRS)和各公司最新宣布的研究成果,探讨了各种光刻技术用于32nm节点的可能性。The current status and lithography roadmap of ITRS 2006 is reviewed in this paper, The trends of lithography Techniques for the node of 32nm has been approached with the roadmap of ITRS and the newest results of research announced in SPIE 2006 Optical Microlithography symposium and IEDM 2007.

关 键 词：浸液式光刻 折射率 双重曝光 极紫外光刻 纳米压印光刻 曝光设备 

分 类 号：TN305.7[电子电信—物理电子学]