热处理气氛对直拉硅单晶中体缺陷的影响  

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

作　　者：崔灿[1] 杨德仁[2] 马向阳[2] 

机构地区：[1]浙江理工大学物理系,杭州310018 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2007年第6期865-868,共4页半导体学报（英文版）

基　　金：国家杰出青年基金(批准号:60225010);国家高技术研究发展计划(批准号:2004AA3Z1142)资助项目~~

摘　　要：研究了五种不同的热处理气氛对直拉硅中氧沉淀及其诱生缺陷的影响.实验结果表明,经过低-高退火处理的硅片继续在五种不同的气氛中高温退火,氧沉淀会部分溶解,其溶解量与热处理气氛没有明显的关系,但不同气氛中处理的硅片中体缺陷(BMDs)的分布不同.并对此现象的机理进行了讨论,认为热处理气氛影响了硅片中点缺陷的分布从而影响到BMDs的分布.此研究对集成电路生产中内吸杂工艺的保护气氛的选择有指导意义.The effect of annealing atmosphere on the behavior of oxygen precipitates and their induced defects in Czochrals-ki silicon during high temperature annealing is investigated. The silicon wafers were subjected to a low-high two-step annea-ling followed by a high-temperature annealing in five different atmospheres. It was found that the amount of dissolved oxy-gen precipitates in the high temperature annealing is independent of the annealing atmospheres, whereas the annealing atmos-pheres influence the distribution of the bulk micro-defects （BMDs） in the cross section of the wafers. It was confirmed that the high-temperature annenaling in various atmospheres induced different point defects in the wafer and thus affected the distribution of BMDs. This investigation could be beneficial for the selection of annealing atmosphere in the internal gettering process during the manufacture of the integrated circuits.

关 键 词：直拉硅 氧沉淀 内吸杂 

分 类 号：TN304.05[电子电信—物理电子学]