SiO_2衬底上PECVD-Si_(1-x)Ge_x薄膜研究(英文)  

Investigation of PECVD-Si_(1-x)Ge_x Thin Film on SiO_2

作　　者：王光伟[1] 郑宏兴[1] 马兴兵[1] 张建民[1] 曹继华[1] 

机构地区：[1]天津工程师范大学电子工程系,天津300222

出　　处：《液晶与显示》2007年第2期109-114,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：Sponsored by National Natural Science Foundation of China(No.60671009);Tianjin Committee of education(No.20060605)

摘　　要：在覆盖SiO2的n-Si(100)衬底上,采用等离子体增强化学沉积法(PECVD)制备Si1-xGex薄膜材料。薄膜Ge含量x及元素的深度分布由俄歇电子谱(AES)测定。对Si1-xGex进行热退火处理,以考察退火温度和时间对薄膜特性的影响。薄膜的物相通过X射线衍射(XRD)确定。基于XRD图谱,利用Scherer公式计算平均晶粒大小。Si1-xGex薄膜载流子霍尔迁移率由霍尔效应法测定。数值拟合得到霍尔迁移率与平均晶粒尺寸为近线性关系,从而得出PECVD-Si1-xGex薄膜的电输运特性基本符合Seto模型的结论。Silicon-germanium （Si1-xGex ） thin films were grown on SiO2-coated n-Si （100） substrates by plasma enhancement chemical vapor deposition （PECVD） method. The Ge fraction in Si1-xGex layer was determined at x=0. 14-0.16 intervals by Auger electron spectroscopy （AES）. The samples were thermally annealed in a conventional furnace. The temperature and duration were studied to explore the annealing effects on some physical and electrical properties of Si1-x Gex thin films. Phase identification was performed by X-ray diffractometry （XRD）. Based on XRD, the average grain size was calculated in terms of Scherer＇s formula. It is obtained that the hole mobility has a nearly linear correlation with the average grain size. It can be inferred that the electrical transport property of PECVD-Si1-xGex film in this study follows Seto＇s model fairly well.

关 键 词：锗硅薄膜 等离子体增强化学沉积 热退火 晶相成核与生长 

分 类 号：O484.4[理学—固体物理]