SOI结构M-z型调制器的有限元法分析  

FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR

作　　者：赵策洲[1] 刘恩科[1] 李国正[1] 高勇[1] 刘西钉[1] 

机构地区：[1]西安交通大学电子工程系,西安710049

出　　处：《电子科学学刊》1997年第1期141-144,共4页

基　　金：国家"863"计划基金

摘　　要：本文提出了采用有限元法分析SOI(Silicon on Insulator)结构M-Z(Mach-Zehnder)干涉型调制器的新方法。该方法在大截面单模SOI脊形波导理论的基础上,根据等离子体色散效应分析了这种调制器的电光调制机理;根据有限元法分析了p^+n结大注入时该调制器的电学性质,从而为实际研制成这种干涉型调制器打下了理论基础。A new method for analysing SOI (Silicon on Insulator) structure Mach-Zehnder inter-ferometric modulator by using finite element method is put forward. On the basis of the theory of the single-mode SOI rib optical waveguides with large cross-section, the electro-optic modulating mechanism of the modulator is investigated by using the plasma dispersion effect, and the electrical characteristics of the device is analysed by using the finite element method at p+n junction large injected. So the method provides a basis of the theory for the device to be fabricated.

关 键 词：集成光学 调制器 有限元法 

分 类 号：TN256[电子电信—物理电子学] TN761