优化生长的In_xGa_(1-x)As缓冲层上双势垒In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/Al_zGa_(1-z)As多量子阱应变状态测量  

Strain State Measurements of In_yGa_(1-y)As/Al_zGa_(1-z)As/GaAs/ Al_zGa_(1-z)As Double Barrier Quantum Well Material Grown on In_xGa_(1-x)As Buffer Layer

作　　者：王小军[1] 郑联喜[1] 肖智博 王玉田[1] 胡雄伟[1] 王启明[2] 

机构地区：[1]国家光电子工艺中心,北京100083 [2]集成光电子国家重点实验室中国科学院半导体所区,北京100083

出　　处：《Journal of Semiconductors》1997年第2期85-90,共6页半导体学报（英文版）

摘　　要：一种多步生长方法应用于GaAs衬底上的InxGa1-xAs缓冲层的MOCVD生长．在这种InxGa1-xAs缓冲层上生长的InyGa1-yAs／AlzGa1-zAs／GaAs／AlzGa1-xAs双垫垒量子阱材料表现出了很好的晶格特性和光学性质．超晶格的室温光伏谱中出现很强的22H高阶机制吸收峰，表明超晶格界面质量很好．主要应用X射线双晶衍射方法，给出了样品中各层的应变状态．据此，合理地解释了样品的光学测试结果．A multipule-step-growth method is used in the MOCVD growth of thick InxGa1-xAs buffer layer on GaAs substrate. InyGa1-yAs/AlzGa1-zAs/GaAs/Al. double barrier quantum well material grown on this InxGa1-xAs buffer layer is obtained. The material shows good crystal quality and also good optical characteristics. Mainly by double crystal X-diffraction method and also a TEM measurement, we get the strain quantities of each thin layers in the sample and all the structure parameters. Based on these results, we explained the optical properties of this sample well.

关 键 词：量子阱 砷化镓 MOCVD生长 

分 类 号：TN304.23[电子电信—物理电子学]