砷化镓晶体在氯化硫溶液中腐蚀速率的研究  

Determination of Etching Rate of GaAs in S_2Cl_2, Solution

作　　者：曹先安[1] 陈溪滢[1] 李喆深 丁训民[1] 侯晓远[1] 

机构地区：[1]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《Journal of Semiconductors》1997年第2期146-150,共5页半导体学报（英文版）

基　　金：国家教委跨世纪人才基金;国家杰出青年基金

摘　　要：本文研究了不同条件下S2Cl2对GaAs晶体的腐蚀行为，特别是溶液浓度、温度以及摇动程度等几个重要因素对腐蚀作用的影响．在此基础上提出了S2Cl2处理的较佳条件：对于S2Cl2钝化，应选择低浓度的钝化液（＜20％）在较低的室温下进行，而S2Cl2作为GaAs外延预处理手段则选用较高浓度的溶液在较短时间内完成可以得到较好的效果；对于以上两种情形，溶液温度一般控制在20℃以下．The etching rates of GaAs in S2Cl2 solution have been measured as a function of etchent composition and temperature. The influence of agitation on the etching rate of GaAs in S2Cl2 solution has also been discussed. As a pretreatment for GaAs MBE, the S2Cl2, solution with high composition should be adopted, while for passivating GaAs, the S2Cl2 concentration should be chosen lower than 20%. For both cases, it is better to keep the etching temperature lower than 20℃.

关 键 词：砷化镓 氯化硫溶液 腐蚀速率 

分 类 号：TN304.23[电子电信—物理电子学]