双向S型负阻器件的二维数值模拟方法及模拟结果分析  

Two-Dimensional Numerical Simulation of Bi-Directional 'S' Type Negative Resistance Device

作　　者：张富斌[1] 李建军[1] 魏希文[1] 

机构地区：[1]大连理工大学物理系,大连116023

出　　处：《Journal of Semiconductors》1997年第4期302-307,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文介绍了一种对双向S型负阻器件（BNRD）进行二维数值模拟的方法．并用此方法模拟得出了器件的Ⅰ－Ⅴ曲线及截止状态和导通状态下器件的内部电位分布、电子空穴浓度分布和电流密度分布．由此可以更清楚地了解器件的工作机理．此外还对不同结构、工艺参数的BNRD进行了模拟，总结出了器件结构、工艺参数对器件电学特性的影响关系．A two-dimensional numerical method used to simulate the device named 'Bi-directional 'S' Type Negative Resistance Device(BNRD)' is introduced. With the method,we have obtained the 2-D distribution for the voltage, electrons, holes and current density in the BNRD at both the block and conduct states. All these are very useful to understand the mechanism of the device operation. In addition, using the approach we have simulated several BNRD with different structure and process parameters, and summarized the influences of various structure and process parameters upon electronic characteristics of the devices.

关 键 词：负阻器件 双向S型 二维数值模拟 

分 类 号：TN322.4[电子电信—物理电子学]